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| NONLINEAR MODEL SCHEMATIC NE325S01 CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms 0.69nH Lsx 0.07nH Rsx 0.06 ohms Q1 0.6nH Rdx 6 ohms CGS_PKG 0.07pF CDS_PKG 0.05PF SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.8 0 8 0.103 0.092 0.08 2 1 0.715 3e-13 1.22 0 0 4e-12 0.13e-12 5000 1e-9 0.3e-12 0.02e-12 0.3 0.1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 2 2 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 (1) Series IV Libra TOM Model EXCLUSIVE NORTH AMERICAN AGENT FOR California Eastern Laboratories RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS PRINTED IN USA ON RECYCLED PAPER -10/98 CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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